Figure 5: Power Comparisons of FRAM and EEPROM During a 1-Byte Data Write
an alternative to Flash and EEPROM
by offering virtually infinite endurance,
instant non-volatility, higher write
speed, and low power operation.
To demonstrate how FRAMs reduce
the overall system power that is essential
to IoT systems, an experiment was set
up with FRAM and EEPROM. In the
experiment, one byte of data was periodically logged into FRAM and EEPROM.
This was a typical Io T sensor node
application where a few bytes of data
were written periodically. The results of
the experiment are given below.
Periodically logging a few bytes of
data to memory is generally performed
by Io T sensor nodes. Hence, fast writes
not only reduce the power consumed by
memory but also lower overall system
power consumption by reducing the
system power-on time. The advantage
of FRAM over EEPROM increases with
frequency, as is illustrated in Figure 4
and Figure 5.
FRAM Technology Brief
Energy Comparison of FRAM and EEPROM
This demonstrates that for certain
applications, FRAM’s faster write speed
delivers both performance and energy
advantages that are desirable for many
IoT applications. MDT